100 citations · 148 across the 10 of their papers we have counts for
12 papers
Toward Tunable Magnetic Dirac Semimetals: Mn Doping of CdAs
Anthony D. Rice, Ian Leahy, Herve Ness +8
Magnetic impurities provide a route toward increasing functionality in electronic materials, often enabling new device concepts and architectures. In the case of topological semime…
Silicon Implantation and Annealing in -GaO: Role of Ambient, Temperature, and Time
K. R. Gann, N. Pieczulewski1, C. A. Gorsak +9
Optimizing thermal anneals of Si-implanted -GaO is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature…
Bulk and film synthesis pathways to ternary magnesium tungsten nitrides
Christopher L. Rom, Rebecca W. Smaha, Callan A. Knebel +4
Bulk solid state synthesis of nitride materials usually leads to thermodynamically stable, cation-ordered crystal structures, whereas thin film synthesis tends to favor disordered,…
Thin film TaAs: developing a platform for Weyl semimetal devices
Jocienne N. Nelson, Anthony D. Rice, Rafal Kurleto +12
MX monopnictide compounds (M=Nb,Ta, X = As,P) are prototypical three-dimensional Weyl semimetals (WSMs) that have been shown in bulk single crystal form to have potential for a wid…
Composition dependent electrochemical properties of earth-abundant ternary nitride anodes
M Brooks Tellekamp, Anna Osella, Karen N Heinselman +2
Growing energy storage demands on lithium-ion batteries necessitate exploration of new electrochemical materials as next-generation battery electrode materials. In this work, we in…
Combinatorial synthesis of cation-disordered manganese tin nitride MnSnN thin films with magnetic and semiconducting properties
Christopher L. Rom, Rebecca W. Smaha, Celeste L. Melamed +11
Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational…
Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance
Shahadat H. Sohel, Ramchandra Kotecha, Imran S Khan +4
-GaO based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5…
The role of disorder in the synthesis of metastable zinc zirconium nitrides
Rachel Woods-Robinson, Vladan Stevanović, Stephan Lany +4
In materials science, it is often assumed that ground state crystal structures predicted by density functional theory are the easiest polymorphs to synthesize. Ternary nitride mate…
Growth and Characterization of Homoepitaxial -GaO Layers
M. Brooks Tellekamp, Karen N. Heinselman, Steve Harvey +2
-GaO is a next-generation ultra wide bandgap semiconductor (E = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generatio…
Thin film synthesis of semiconductors in the Mg-Sb-N materials system
Karen N. Heinselman, Stephan Lany, John D. Perkins +2
Nitrides feature many interesting properties, such as a wide range of bandgaps suitable for optoelectronic devices including light-emitting diodes (LEDs), and piezoelectric respons…
COMBIgor: data analysis package for combinatorial materials science
Kevin R. Talley, Sage R. Bauers, Celeste L. Melamed +9
Combinatorial experiments involve synthesis of sample libraries with lateral composition gradients requiring spatially-resolved characterization of structure and properties. Due to…
Driving Perpendicular Heat Flow: Ambipolar Transverse Thermoelectrics for Microscale and Cryogenic Peltier Cooling
Chuanle Zhou, S. Birner, Yang Tang +2
Whereas thermoelectric performance is normally limited by the figure of merit ZT, transverse thermoelectrics can achieve arbitrarily large temperature differences in a single leg e…