4 papers
Gallium Oxide Heterojunction Diodes for Improved High-Temperature Performance
Shahadat H. Sohel, Ramchandra Kotecha, Imran S Khan +4
-GaO based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5…
Growth and Characterization of Homoepitaxial -GaO Layers
M. Brooks Tellekamp, Karen N. Heinselman, Steve Harvey +2
-GaO is a next-generation ultra wide bandgap semiconductor (E = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generatio…
Thin film synthesis of semiconductors in the Mg-Sb-N materials system
Karen N. Heinselman, Stephan Lany, John D. Perkins +2
Nitrides feature many interesting properties, such as a wide range of bandgaps suitable for optoelectronic devices including light-emitting diodes (LEDs), and piezoelectric respons…
COMBIgor: data analysis package for combinatorial materials science
Kevin R. Talley, Sage R. Bauers, Celeste L. Melamed +9
Combinatorial experiments involve synthesis of sample libraries with lateral composition gradients requiring spatially-resolved characterization of structure and properties. Due to…