D. Dryden

collaborators

2 papers

cond-mat.mtrl-sci2023

Silicon Implantation and Annealing in $β$ -Ga $_{2}$ O $_{3}$ : Role of Ambient, Temperature, and Time

K. R. Gann, N. Pieczulewski1, C. A. Gorsak +9

Optimizing thermal anneals of Si-implanted $β$ -Ga $_{2}$ O $_{3}$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature…

cond-mat.mtrl-sci2022

Silicon-doped $β$ -Ga $_{2}$ O $_{3}$ films grown at 1 $μ$ m/h by suboxide molecular-beam epitaxy

Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak +21

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$ -Ga $_{2}$ O $_{3}$ at a growth rate of ~1 $μ$ m/h with control of the silicon doping concentration from 5x10 $^{16}$ …

Silicon Implantation and Annealing in β-Ga2​O3​: Role of Ambient, Temperature, and Time

Silicon-doped β-Ga2​O3​ films grown at 1 μm/h by suboxide molecular-beam epitaxy

Silicon Implantation and Annealing in $β$ -Ga $_{2}$ O $_{3}$ : Role of Ambient, Temperature, and Time

Silicon-doped $β$ -Ga $_{2}$ O $_{3}$ films grown at 1 $μ$ m/h by suboxide molecular-beam epitaxy