313 citations · 456 across the 8 of their papers we have counts for
11 papers
Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy
Hyunseok Kim, Yunpeng Liu, Kuangye Lu +26
Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer gr…
Experimental determination of the valence band offsets of and with
Md Rezaul Karim, Brenton A. Noesges, Benthara Hewage Dinushi Jayatunga +6
A predicted type-II staggered band alignment with an approximately valence band offset at the heterointerface has inspired novel band-engineered $III-N/ZnGeN…
Coherent Growth and Characterization of van der Waals 1T-VSe Layers on GaAs(111)B Using Molecular Beam Epitaxy
Tiancong Zhu, Dante J. O'Hara, Brenton A. Noesges +7
We report epitaxial growth of vanadium diselenide (VSe) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thick…
Structural Heterogeneity, Ductility, and Glass Forming Ability of Zr-Based Metallic Glasses
Soohyun Im, Pengyang Zhao, Geun Hee Yoo +9
We show the correlation between nanoscale structural heterogeneity and mechanical property and glass forming ability of Zr-based metallic glasses (MGs). Detailed parameters of medi…
Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3
Jared M. Johnson, Zhen Chen, Joel B. Varley +10
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the pr…
Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures
Shi Che, Petr Stepanov, Supeng Ge +13
The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic prop…