Jinwoo Hwang

collaborators

4 papers

physics.app-ph2025

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $β$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Dong Su Yu +6

This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al $_{2}$ O $_{3}$ dielectrics on (010) $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ …

physics.app-ph2024

Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes

Manisha Muduli, Yongkang Xia, Seunghyun Lee +6

There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on…

cond-mat.mtrl-sci2024

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature

Kingsley Egbo, Emily M. Garrity, William A. Callahan +6

NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we…

cond-mat.mtrl-sci2024

Atomic Layer Molecular Beam Epitaxy of Kagome Magnet RMn $_{6}$ Sn $_{6}$ (R = Er, Tb) Thin Films

Shuyu Cheng, Igor Lyalin, Wenyi Zhou +1

Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn $_{6}$ Sn $_{6}$ (R = rare earth) compounds are…

Electrical and Structural Properties of In-Situ MOCVD Grown Al2​O3​/β-Ga2​O3​ and Al2​O3​/β-(Alx​Ga1−x​)2​O3​ MOSCAPs

Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes

NiGa2​O4​ interfacial layers in NiO/Ga2​O3​ heterojunction diodes at high temperature

Atomic Layer Molecular Beam Epitaxy of Kagome Magnet RMn6​Sn6​ (R = Er, Tb) Thin Films

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $β$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature

Atomic Layer Molecular Beam Epitaxy of Kagome Magnet RMn $_{6}$ Sn $_{6}$ (R = Er, Tb) Thin Films