Jinwoo Hwang

NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we…

cond-mat.mtrl-sci2024★ 4 cited

Atomic Layer Molecular Beam Epitaxy of Kagome Magnet RMn $_{6}$ Sn $_{6}$ (R = Er, Tb) Thin Films

Shuyu Cheng, Igor Lyalin, Wenyi Zhou +1

Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn $_{6}$ Sn $_{6}$ (R = rare earth) compounds are…

NiGa2​O4​ interfacial layers in NiO/Ga2​O3​ heterojunction diodes at high temperature

Atomic Layer Molecular Beam Epitaxy of Kagome Magnet RMn6​Sn6​ (R = Er, Tb) Thin Films

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature

Atomic Layer Molecular Beam Epitaxy of Kagome Magnet RMn $_{6}$ Sn $_{6}$ (R = Er, Tb) Thin Films