Jinwoo Hwang

This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al $_{2}$ O $_{3}$ dielectrics on (010) $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ …

physics.app-ph2024

Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes

Manisha Muduli, Yongkang Xia, Seunghyun Lee +6

There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on…

Electrical and Structural Properties of In-Situ MOCVD Grown Al2​O3​/β-Ga2​O3​ and Al2​O3​/β-(Alx​Ga1−x​)2​O3​ MOSCAPs

Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $β$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs