313 citations · 1.3k across the 31 of their papers we have counts for
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Nanoscale SrIrO Freestanding Thin-Films for Flexible Electronics
Sujan Shrestha, Matthew Coile, Menglin Zhu +7
We report the structural and optical properties of nanoscale Sr2IrO4 freestanding thin-films fabricated using a water-soluble Sr3Al2O6 layer. The coherent lattice structure, phonon…
Laser-Ablated Au Electrodes with Preferred Orientation and Flat Interface on Oxides
Ambrose Seo, Richard Lai, Sujan Shrestha +5
Gold (Au) thin-film electrodes deposited on oxides by pulsed laser deposition (PLD) exhibit distinctive structural properties compared with thermally evaporated Au films. While the…
Experimentally informed structure optimization of amorphous TiO2 films grown by atomic layer deposition
Jun Meng, Mehrdad Abbasi, Yutao Dong +4
Amorphous titanium dioxide TiO2 (a-TiO2) has been widely studied, particularly as a protective coating layer on semiconductors to prevent corrosion and promote electron-hole conduc…
Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates
A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang +5
Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the pr…
Ultra-Wide Bandgap GaO-on-SiC MOSFETs
Yiwen Song, Arkka Bhattacharyya, Anwarul Karim +8
Ulta-wide bandgap semiconductors based on -GaO offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's w…
In-situ MOCVD Growth and Band Offsets of AlO Dielectric on -GaO and -(AlGa)O thin films
A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang +2
The in-situ metalorganic chemical vapor deposition (MOCVD) growth of AlO dielectrics on -GaO and -(AlGa)O films is investigated as a funct…
MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang +3
Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates vi…
Planar and 3-dimensional damage free etching of -Ga2O3 using atomic gallium flux
Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7
In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in -Ga2O3. Etching of …
Experimental determination of the valence band offsets of and with
Md Rezaul Karim, Brenton A. Noesges, Benthara Hewage Dinushi Jayatunga +6
A predicted type-II staggered band alignment with an approximately valence band offset at the heterointerface has inspired novel band-engineered $III-N/ZnGeN…
Coherent Growth and Characterization of van der Waals 1T-VSe Layers on GaAs(111)B Using Molecular Beam Epitaxy
Tiancong Zhu, Dante J. O'Hara, Brenton A. Noesges +7
We report epitaxial growth of vanadium diselenide (VSe) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thick…
Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBiSe
Tiancong Zhu, Alexander J. Bishop, Tong Zhou +12
The intrinsic magnetic topological insulators MnBiX (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magn…
Structural Heterogeneity, Ductility, and Glass Forming Ability of Zr-Based Metallic Glasses
Soohyun Im, Pengyang Zhao, Geun Hee Yoo +9
We show the correlation between nanoscale structural heterogeneity and mechanical property and glass forming ability of Zr-based metallic glasses (MGs). Detailed parameters of medi…
Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3
Jared M. Johnson, Zhen Chen, Joel B. Varley +10
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the pr…
Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/-FeO Bilayers
Yang Cheng, Sisheng Yu, Adam S. Ahmed +3
To date, magnetic proximity effect (MPE) has only been conclusively observed in ferromagnet (FM) based systems. We report the observation of anomalous Hall effect and anisotropic m…
High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures
Yuewei Zhang, Adam Neal, Zhanbo Xia +11
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodete…
Engineering One-Dimensional Quantum Stripes from Superlattices of Two-Dimensional Layered Materials
J. H. Gruenewald, J. Kim, H. S. Kim +10
One-dimensional (1D) quantum systems, which are predicted to exhibit novel states of matter in theory, have been elusive in experiment. Here we report a superlattice method of crea…
Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates
Choong Hee Lee, Sriram Krishnamoorthy, Dante J. O'Hara +6
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work…
FEMSIM+HRMC: Simulation of and Structural Refinement using Fluctuation Electron Microscopy for Amorphous Materials
Jason J. Maldonis, Jinwoo Hwang, Paul M. Voyles
FEMSIM, a Fortran code, has been developed to simulate the fluctuation electron microscopy signal, the variance, V(k), from a model atomic structure. FEMSIM has been incorporated i…
Three-Dimensional Imaging of Individual Point Defects Using Selective Detection Angles in Annular Dark Field Scanning Transmission Electron Microscopy
Jared M. Johnson, Soohyun Im, Jinwoo Hwang
We propose a new scanning transmission electron microscopy (STEM) technique that can realize the three-dimensional (3D) characterization of vacancies, lighter and heavier dopants w…
Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance
Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang +3
We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed…
Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters
Yuewei Zhang, Sriram Krishnamoorthy, Jared M. Johnson +6
Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region ne…
Structural origins of the properties of rare earth nickelate superlattices
Jinwoo Hwang, Junwoo Son, Jack Y. Zhang +3
NiO6 octahedral tilts in the LaNiO3/SrTiO3 superlattices are quantified using position averaged convergent beam electron diffraction in scanning transmission electron microscopy. I…
Nanoscale Quantification of Octahedral Tilts in Perovskite Films
Jinwoo Hwang, Jack Y. Zhang, Junwoo Son +1
NiO6-octahedral tilts in ultrathin LaNiO3 films were studied using position averaged convergent beam electron diffraction (PACBED) in scanning transmission electron microscopy. Bot…