Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures
arXiv:1803.03679 · doi:10.1103/PhysRevLett.125.246401
Abstract
The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depending on their relative alignment angle between hexagonal BN (hBN), even at very large twist angles. Moreover, addition or removal of the hBN substrate results in an inversion of the K and K' valley in TLG's lowest Landau level (LL). Our work illustrates the critical role played by substrates in van der Waals heterostructures and opens the door towards band structure modification and valley control via substrate and twist angle engineering.
References in corpus (34)
- Van der Waals heterostructures
- Hofstadter's butterfly in moire superlattices: A fractal quantum Hall effect
- Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure
- Graphene bilayer with a twist: electronic structure
- Cloning of Dirac fermions in graphene superlattices
- Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
- Commensurate-incommensurate transition for graphene on hexagonal boron nitride
- Tunable Moiré Bands and Strong Correlations in Small-Twist-Angle Bilayer Graphene
- Twistronics: Manipulating the Electronic Properties of Two-dimensional Layered Structures through their Twist Angle
- Superlattice-induced insulating states and valley-protected orbits in twisted bilayer graphene
- A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride
- Dependence of band structures on stacking and field in layered graphene
- Probing the Electronic Structure of Bilayer Graphene by Raman Scattering
- Determination of the gate-tunable bandgap and tight-binding parameters in bilayer graphene using infrared spectroscopy
- Transport Spectroscopy of Symmetry-Broken Insulating States in Bilayer Graphene
- Determination of the electronic structure of bilayer graphene from infrared spectroscopy results
- Generic Miniband Structure of Graphene on a Hexagonal Substrate
- Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene
- Accurate tight-binding and continuum models for the bands of bilayer graphene
- Tearing Graphene Sheets From Adhesive Substrates Produces Tapered Nanoribbons
- Fabrication of Graphene p-n-p Junctions with Contactless Top Gates
- Landau level spectra and the quantum Hall effect of multilayer graphene
- Moiré band model and band gaps of graphene on hexagonal boron nitride
- Magnetoconductance Oscillations in High-Mobility Suspended Bilayer and Trilayer Graphene
- Real-space imaging of the tailored plasmons in twisted bilayer graphene
- Electrical Transport in High Quality Graphene pnp Junctions
- Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene
- New Dirac points and multiple Landau level crossings in biased trilayer graphene
- Broken Symmetry Quantum Hall States in Dual Gated ABA Trilayer Graphene
- Landau level splittings, phase transitions, and non-uniform charge distribution in trilayer graphene
- Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene
- Tunable symmetries of integer and fractional quantum Hall phases in heterostructures with multiple Dirac bands
- Inter-subband Landau level couplings induced by in-plane magnetic fields in trilayer graphene
- Landau level evolution driven by band hybridization in mirror symmetry broken ABA-stacked trilayer graphene