Magnetoconductance Oscillations in High-Mobility Suspended Bilayer and Trilayer Graphene
arXiv:1005.0033 · doi:10.1103/PhysRevLett.105.246601
Abstract
We report pronounced magnetoconductance oscillations observed on suspended bilayer and trilayer graphene devices with mobilities up to 270,000 cm2/Vs. For bilayer devices, we observe conductance minima at all integer filling factors nu between 0 and -8, as well as a small plateau at ν=1/3. For trilayer devices, we observe features at nu=-1, -2, -3 and -4, and at ν~0.5 that persist to 4.5K at B=8T. All of these features persist for all accessible values of Vg and B, and could suggest the onset of symmetry breaking of the first few Landau (LL) levels and fractional quantum Hall states.
to appear in Phys. Rev. Lett
References in corpus (17)
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Ripple Texturing of Suspended Graphene Atomic Membranes
- Asymmetry gap in the electronic band structure of bilayer graphene
- All-graphene integrated circuits via strain engineering
- Observation of the Fractional Quantum Hall Effect in Graphene
- Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene
- Landau Level Splitting in Graphene in High Magnetic Fields
- Electronic states and Landau levels in graphene stacks
- Current-induced cleaning of graphene
- Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
- Midgap states and charge inhomogeneities in corrugated graphene
- Pseudomagnetic fields and ballistic transport in a suspended graphene sheet
- Symmetry breaking of the zero energy Landau level in bilayer graphene
- Tunable Excitons in Biased Bilayer Graphene
- Lithography-free Fabrication of High Quality Substrate-supported and Freestanding Graphene devices
- Conformal Invariance and Shape-Dependent Conductance of Graphene Samples
- Probing Charging and Localization in the Quantum Hall Regime by Graphene pnp Junctions
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- Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene
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- Multiband ballistic transport and anisotropic commensurability magnetoresistance in antidot lattices of AB-stacked trilayer graphene
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