Inter-subband Landau level couplings induced by in-plane magnetic fields in trilayer graphene

Abstract

We observed broken-symmetry quantum Hall effects and level crossings between spin- and valley- resolved Landau levels (LLs) in Bernal stacked trilayer graphene. When the magnetic field was tilted with respect to sample normal from $0^{\circ }$ to $66^{\circ }$, the LL crossings formed at intersections of zeroth and second LLs from monolayer-graphene-like and bilayer-graphene-like subbands, respectively, exhibited a sequence of transitions. The results indicate the LLs from different subbands are coupled by in-plane magnetic fields ($B_{\parallel }$), which was explained by developing the tight-binding model Hamiltonian of trilayer graphene under $B_{\parallel }$.

arXiv comment4 figures, accepted for publication in Physical Review Letters

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• Low energy band structure in Bernal stacked hexlayer graphene: Landau fan diagram and resistance ridge
• Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures
• On dielectric screening in twisted double bilayer graphene
• Multiband ballistic transport and anisotropic commensurability magnetoresistance in antidot lattices of AB-stacked trilayer graphene
• Generation and control of non-local chiral currents in graphene superlattices by orbital Hall effect