activity
20162024
most citedLong-Distance Spin Transport Through a Graphene Quantum Hall Antiferromagnet

97 citations · 435 across the 17 of their papers we have counts for

collaborators

17 papers

cond-mat.str-el2024★ 6 cited

Dominant 1/3-filling Correlated Insulator States and Orbital Geometric Frustration in Twisted Bilayer Graphene

Haidong Tian, Emilio Codecido, Dan Mao +8

Geometric frustration is a phenomenon in a lattice system where not all interactions can be satisfied, the simplest example being antiferromagnetically coupled spins on a triangula…

cond-mat.mes-hall2022★ 4 cited

Tuning Spin Transport in a Graphene Antiferromagnetic Insulator

Petr Stepanov, Dmitry L. Shcherbakov, Shi Che +7

Long-distance spin transport through anti-ferromagnetic insulators (AFMIs) is a long-standing goal of spintronics research. Unlike conventional spintronics systems, monolayer graph…

cond-mat.supr-con2021★ 6 cited

Evidence for Flat Band Dirac Superconductor Originating from Quantum Geometry

Haidong Tian, Shi Che, Tianyi Xu +7

In a flat band superconductor, the charge carriers' group velocity vF is extremely slow, quenching their kinetic energy. The emergence of superconductivity thus appears paradoxical…

cond-mat.mes-hall2020

Equilibration and Filtering of Quantum Hall Edge States in Few-Layer Black Phosphorus

J. Yang, K. Wang, S. Che +9

We realize p-p'-p junctions in few-layer black phosphorus (BP) devices, and use magneto-transport measurements to study the equilibration and transmission of edge states at the int…

cond-mat.mes-hall2020★ 8 cited

Helical Edge States and Quantum Phase Transitions in Tetralayer Graphene

Shi Che, Yanmeng Shi, Jiawei Yang +9

Helical conductors with spin-momentum locking are promising platforms for Majorana fermions. Here we report observation of two topologically distinct phases supporting helical edge…

cond-mat.mes-hall2019★ 16 cited

Gate Tunable Magnetism and Giant Magnetoresistance in ABC-stacked Few-Layer Graphene

Yongjin Lee, Shi Che, Jairo Velasco +6

Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM).…

cond-mat.mes-hall2019★ 80 cited

Quantum Hall Effect Measurement of Spin-Orbit Coupling Strengths in Ultraclean Bilayer Graphene/WSe2 Heterostructures

Dongying Wang, Shi Che, Guixin Cao +5

We study proximity-induced spin-orbit coupling (SOC) in bilayer graphene/few-layer WSe2 heterostructure devices. Contact mode atomic force microscopy (AFM) cleaning yields ultra-cl…

cond-mat.mes-hall2019★ 7 cited

Correlated Insulating and Superconducting States in Twisted Bilayer Graphene Below the Magic Angle

Emilio Codecido, Qiyue Wang, Ryan Koester +9

The emergence of flat bands and correlated behaviors in 'magic angle' twisted bilayer graphene (tBLG) has sparked tremendous interest, though many aspects of the system are under i…

cond-mat.mes-hall2019★ 1 cited

Quantum Parity Hall effect in ABA Graphene

Petr Stepanov, Yafis Barlas, Shi Che +10

The celebrated phenomenon of quantum Hall effect has recently been generalized from transport of conserved charges to that of other approximately conserved state variables, includi…

cond-mat.mes-hall2018★ 58 cited

Integer and Fractional Quantum Hall effect in Ultra-high Quality Few-layer Black Phosphorus Transistors

Jiawei Yang, Son Tran, Jason Wu +8

As a high mobility two-dimensional semiconductor with strong structural and electronic anisotropy, atomically thin black phosphorus (BP) provides a new playground for investigating…

cond-mat.mes-hall2018★ 6 cited

Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures

Shi Che, Petr Stepanov, Supeng Ge +13

The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic prop…

cond-mat.mes-hall2018★ 1 cited

Large tunable intrinsic gap in rhombohedral-stacked tetralayer graphene

K. Myhro, S. Che, Y. Shi +5

In rhombohedral-stacked few-layer graphene, the very flat energy bands near the charge neutrality point are unstable to electronic interactions, giving rise to states with spontane…

cond-mat.mes-hall2018★ 48 cited

Tunable Lifshitz Transitions and Multiband Transport in Tetralayer Graphene

Yanmeng Shi, Shi Che, Kuan Zhou +8

As the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring Lifshitz transition, a change in the topolog…

cond-mat.mes-hall2018★ 97 cited

Long-Distance Spin Transport Through a Graphene Quantum Hall Antiferromagnet

Petr Stepanov, Shi Che, Dmitry Shcherbakov +11

Antiferromagnetic insulators (AFMI) are robust against stray fields, and their intrinsic dynamics could enable ultrafast magneto-optics and ultrascaled magnetic information process…

cond-mat.mtrl-sci2016★ 49 cited

Unusual interlayer quantum transport behavior caused by the zeroth Landau level in YbMnBi2

J. Y. Liu, J. Hu, D. Graf +10

Relativistic fermions in topological quantum materials are characterized by linear energy-momentum dispersion near band crossing points. Under magnetic field, relativistic fermions…

cond-mat.mes-hall2016★ 27 cited

Tunable symmetries of integer and fractional quantum Hall phases in heterostructures with multiple Dirac bands

Petr Stepanov, Yafis Barlas, Tim Espiritu +5

The co-presence of multiple Dirac bands in few-layer graphene leads to a rich phase diagram in the quantum Hall regime. Using transport measurements, we map the phase diagram of BN…

cond-mat.mes-hall2016★ 21 cited

Energy gaps and layer polarization of integer and fractional quantum Hall states in bilayer graphene

Yanmeng Shi, Yongjin Lee, Shi Che +6

Owing to the spin, valley, and orbital symmetries, the lowest Landau level (LL) in bilayer graphene exhibits multicomponent quantum Hall ferromagnetism. Using transport spectroscop…