80 citations · 112 across the 6 of their papers we have counts for
4 papers · 1 filter
Integer and Fractional Quantum Hall effect in Ultra-high Quality Few-layer Black Phosphorus Transistors
Jiawei Yang, Son Tran, Jason Wu +8
As a high mobility two-dimensional semiconductor with strong structural and electronic anisotropy, atomically thin black phosphorus (BP) provides a new playground for investigating…
Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures
Shi Che, Petr Stepanov, Supeng Ge +13
The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic prop…
Large tunable intrinsic gap in rhombohedral-stacked tetralayer graphene
K. Myhro, S. Che, Y. Shi +5
In rhombohedral-stacked few-layer graphene, the very flat energy bands near the charge neutrality point are unstable to electronic interactions, giving rise to states with spontane…
Tunable Lifshitz Transitions and Multiband Transport in Tetralayer Graphene
Yanmeng Shi, Shi Che, Kuan Zhou +8
As the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring Lifshitz transition, a change in the topolog…