Jinwoo Hwang

activity

20122026

most citedModulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

313 citations · 1.3k across the 31 of their papers we have counts for

collaborators

Showing 2021Show all

2 papers · 1 filter

cond-mat.mtrl-sci2021

Planar and 3-dimensional damage free etching of $β$ -Ga2O3 using atomic gallium flux

Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7

In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $β$ -Ga2O3. Etching of $β$ …

cond-mat.mtrl-sci2021★ 1 cited

Experimental determination of the valence band offsets of $Z n G e N_{2}$ and $Z n G e_{0.94} G a_{0.12} N_{2}$ with $G a N$

Md Rezaul Karim, Brenton A. Noesges, Benthara Hewage Dinushi Jayatunga +6

A predicted type-II staggered band alignment with an approximately $1.4 e V$ valence band offset at the $Z n G e N_{2} / G a N$ heterointerface has inspired novel band-engineered $III-N/ZnGeN…

Planar and 3-dimensional damage free etching of β-Ga2O3 using atomic gallium flux

Experimental determination of the valence band offsets of ZnGeN2​ and ZnGe0.94​Ga0.12​N2​ with GaN

Planar and 3-dimensional damage free etching of $β$ -Ga2O3 using atomic gallium flux

Experimental determination of the valence band offsets of $Z n G e N_{2}$ and $Z n G e_{0.94} G a_{0.12} N_{2}$ with $G a N$