activity
20122026
most citedModulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

313 citations · 1.3k across the 31 of their papers we have counts for

collaborators
Showing 2016Show all

6 papers · 1 filter

cond-mat.mtrl-sci2016★ 28 cited

Engineering One-Dimensional Quantum Stripes from Superlattices of Two-Dimensional Layered Materials

J. H. Gruenewald, J. Kim, H. S. Kim +10

One-dimensional (1D) quantum systems, which are predicted to exhibit novel states of matter in theory, have been elusive in experiment. Here we report a superlattice method of crea…

cond-mat.mtrl-sci2016★ 81 cited

Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates

Choong Hee Lee, Sriram Krishnamoorthy, Dante J. O'Hara +6

Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work…

cond-mat.mtrl-sci2016★ 13 cited

FEMSIM+HRMC: Simulation of and Structural Refinement using Fluctuation Electron Microscopy for Amorphous Materials

Jason J. Maldonis, Jinwoo Hwang, Paul M. Voyles

FEMSIM, a Fortran code, has been developed to simulate the fluctuation electron microscopy signal, the variance, V(k), from a model atomic structure. FEMSIM has been incorporated i…

cond-mat.mtrl-sci2016

Three-Dimensional Imaging of Individual Point Defects Using Selective Detection Angles in Annular Dark Field Scanning Transmission Electron Microscopy

Jared M. Johnson, Soohyun Im, Jinwoo Hwang

We propose a new scanning transmission electron microscopy (STEM) technique that can realize the three-dimensional (3D) characterization of vacancies, lighter and heavier dopants w…

physics.ins-det2016★ 80 cited

High Current Density 2D/3D Esaki Tunnel Diodes

Sriram Krishnamoorthy, Edwin W. Lee, Choong Hee Lee +6

The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel…

cond-mat.mtrl-sci2016★ 46 cited

Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance

Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang +3

We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed…