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Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates
Choong Hee Lee, Sriram Krishnamoorthy, Dante J. O'Hara +6
Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work…
Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +4
Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type co…
AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts
Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy +2
We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic co…
Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +4
We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We…
High Current Density 2D/3D Esaki Tunnel Diodes
Sriram Krishnamoorthy, Edwin W. Lee, Choong Hee Lee +6
The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel…
Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance
Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang +3
We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed…