313 citations · 940 across the 18 of their papers we have counts for
18 papers
Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm Current Density
Zhanbo Xia, Chandan Joishi, Shahadat H. Sohel +4
We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design…
Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts
Chandan Joishi, Sheikh Ifatur Rahman, Zhanbo Xia +2
We demonstrate graded AlGaN/GaN heterojunction bipolar transistors (HBTs) with selective injection of minority carriers across a p-GaN base and patterned regrown base contacts. The…
Simulation of GaN-Based Light Emitting Diodes Incorporating Composition Fluctuation Effects
Sheikh Ifatur Rahman, Zane Jamal-Eddine, Zhanbo Xia +3
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last…
Planar and 3-dimensional damage free etching of -Ga2O3 using atomic gallium flux
Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara +7
In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in -Ga2O3. Etching of …
Spectral measurement of the breakdown limit of and tunnel ionization of self-trapped excitons and holes
Md M. Adnan, Darpan Verma, Zhanbo Xia +3
is an unusual semiconductor where large electric fields (~1-6 MV/cm) can be applied while still maintaining a dominant excitonic absorption peak below its ultra-wid…
Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors
Nidhin Kurian Kalarickal, Zixuan Feng, A F M Anhar Uddin Bhuiyan +7
The performance of ultra-wide band gap materials like -GaO is critically dependent on achieving high average electric fields within the active region o…
Probing charge transport and background doping in MOCVD grown (010) -GaO
Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia +8
A new record-high room temperature electron Hall mobility ( at ) for -Ga2O3 is demonstrated in the unin…
Deep-recessed -GaO delta-doped field effect transistors with in situ epitaxial passivation
Chandan Joishi, Zhanbo Xia, John S. Jamison +4
We introduce a deep-recessed gate architecture in -GaO delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device desi…
Metal Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field
Zhanbo Xia, Hareesh Chandrasekar, Wyatt Moore +8
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an orde…
High electron density modulation doping using ultra-thin (1 nm) spacer layer
Nidhin Kurian Kalarickal, Zhanbo Xia, Joe Mcglone +5
We report on the design and demonstration of modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer…
Lateral Heterojunction BaTiO3/AlGaN Diodes with >8MV/cm Breakdown Field
Towhidur Razzak, Hareesh Chandrasekar, Kamal Hussain +11
In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extrem…
Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3
Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone +6
We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass…
Velocity Saturation in La-doped BaSnO3 Thin Films
Hareesh Chandrasekar, Junao Cheng, Tianshi Wang +11
BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properti…
High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures
Yuewei Zhang, Adam Neal, Zhanbo Xia +11
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodete…
MBE grown Self-Powered \b{eta}-Ga2O3 MSM Deep-UV Photodetector
Anamika Singh Pratiyush, Sriram Krishnamoorthy, Sandeep Kumar +4
We demonstrate self-powered \b{eta}-Ga2O3 deep-UV metal-semiconductor-metal (MSM) photodetectors (PD) with 0.5% external quantum efficiency (EQE) at zero bias. 150 nm thick (-201)-…
Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor
Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi +8
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulat…
Delta-doped Beta- Gallium Oxide Field Effect Transistor
Sriram Krishnamoorthy, Zhanbo Xia, Sanyam Bajaj +2
We report silicon delta doping in Gallium Oxide (\b{eta}-Ga2O3) grown by plasma assisted molecular beam epitaxy using a shutter pulsing technique. We describe growth procedures tha…
High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector
Anamika Singh Pratiyush, Sriram Krishnamoorthy, Swanand Vishnu Solanke +4
In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin…