Zhanbo Xia

activity

20172020

most citedModulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

313 citations · 436 across the 6 of their papers we have counts for

collaborators

12 papers

cond-mat.mtrl-sci2020

Spectral measurement of the breakdown limit of $β - G a_{2} O_{3}$ and tunnel ionization of self-trapped excitons and holes

Md M. Adnan, Darpan Verma, Zhanbo Xia +3

$β - G a_{2} O_{3}$ is an unusual semiconductor where large electric fields (~1-6 MV/cm) can be applied while still maintaining a dominant excitonic absorption peak below its ultra-wid…

physics.app-ph2020

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Nidhin Kurian Kalarickal, Zixuan Feng, A F M Anhar Uddin Bhuiyan +7

The performance of ultra-wide band gap materials like $β$ -Ga $_{2}$ O $_{3}$ is critically dependent on achieving high average electric fields within the active region o…

physics.app-ph2020

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$

Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia +8

A new record-high room temperature electron Hall mobility ( $μ_{R T} = 194 c m^{2} / V s$ at $n \sim 8 \times 1 0^{15} c m^{- 3}$ ) for $β$ -Ga2O3 is demonstrated in the unin…

cond-mat.mtrl-sci2020

Deep-recessed $β$ -Ga $_{2}$ O $_{3}$ delta-doped field effect transistors with in situ epitaxial passivation

Chandan Joishi, Zhanbo Xia, John S. Jamison +4

We introduce a deep-recessed gate architecture in $β$ -Ga $_{2}$ O $_{3}$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device desi…

cond-mat.mtrl-sci2019★ 123 cited

Metal $/ B a T i O_{3} / β - G a_{2} O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

Zhanbo Xia, Hareesh Chandrasekar, Wyatt Moore +8

Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an orde…

physics.app-ph2019

High electron density $β - (A l_{0.18} G a_{0.82})_{2} O_{3} / G a_{2} O_{3}$ modulation doping using ultra-thin (1 nm) spacer layer

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe Mcglone +5

We report on the design and demonstration of $β - (A l_{0.18} G a_{0.82})_{2} O_{3} / G a_{2} O_{3}$ modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer…

Spectral measurement of the breakdown limit of β−Ga2​O3​ and tunnel ionization of self-trapped excitons and holes

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Probing charge transport and background doping in MOCVD grown (010) β-Ga2​O3​

Deep-recessed β-Ga2​O3​ delta-doped field effect transistors with in situ epitaxial passivation

Metal/BaTiO3​/β−Ga2​O3​ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

High electron density β−(Al0.18​Ga0.82​)2​O3​/Ga2​O3​ modulation doping using ultra-thin (1 nm) spacer layer

Spectral measurement of the breakdown limit of $β - G a_{2} O_{3}$ and tunnel ionization of self-trapped excitons and holes

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$

Deep-recessed $β$ -Ga $_{2}$ O $_{3}$ delta-doped field effect transistors with in situ epitaxial passivation

Metal $/ B a T i O_{3} / β - G a_{2} O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

High electron density $β - (A l_{0.18} G a_{0.82})_{2} O_{3} / G a_{2} O_{3}$ modulation doping using ultra-thin (1 nm) spacer layer