351 citations · 1.3k across the 10 of their papers we have counts for
10 papers
A Device Non-Ideality Resilient Approach for Mapping Neural Networks to Crossbar Arrays
Arman Kazemi, Cristobal Alessandri, Alan C. Seabaugh +3
We propose a technology-independent method, referred to as adjacent connection matrix (ACM), to efficiently map signed weight matrices to non-negative crossbar arrays. When compare…
Multiwall nanotubes of molybdenum disulfide as optical resonators
D. R. Kazanov, A. V. Poshakinskiy, V. Yu. Davydov +8
We study the optical properties of MoS nanotubes (NTs) with walls comprising dozens of monolayers. We reveal strong peaks in micro-photoluminescence (-PL) spectra when detec…
Ultimate Thin Vertical p-n Junction Composed of 2D Layered Molybdenum Disulfide
Hua-Min Li, Daeyeong Lee, Deshun Qu +4
Semiconducting 2D crystals are currently receiving significant attention due to their great potential to be an ultra-thin body for efficient electrostatic modulation which enables…
Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors
Sara Fathipour, Maja Remskar, Ana Varlec +8
We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown b…
High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes
Wan Sik Hwang, Amit Verma, Hartwin Peelaers +11
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smal…
Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates
Wan Sik Hwang, Pei Zhao, Kristof Tahy +11
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap…
Comparative Study of Chemically Synthesized and Exfoliated Multilayer MoS2 Field-Effect Transistors
Wan Sik Hwang, Maja Remskar, Rusen Yan +8
We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobili…
Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide
Rusen Yan, Qin Zhang, Oleg A. Kirillov +10
The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collec…
Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene
Wan Sik Hwang, Kristof Tahy, Xuesong Li +5
Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition…
Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior
Wan Sik Hwang, Maja Remskar, Rusen Yan +9
We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs…