Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Abstract

Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show drain-current modulation of approximately 10 at 300 K, increasing to nearly 106 at 4 K. The strong temperature dependence of the minimum current indicates the opening of a bandgap for CVD-grown GNR-FETs. The extracted bandgap is estimated to be around 0.1 eV by differential conductance methods. This work highlights the development of CVD-grown large-area graphene and demonstrates the opening of a bandgap in nanoribbon transistors.

8 pages, 3 figures

References in corpus (8)

• Electric Field Effect in Atomically Thin Carbon Films
• Energy Band Gap Engineering of Graphene Nanoribbons
• Graphene Nano-Ribbon Electronics
• Electronic States of Graphene Nanoribbons
• Epitaxial graphene
• Thermally-Limited Current Carrying Ability of Graphene Nanoribbons
• Quantum dot behavior in graphene nanoconstrictions
• Transport gap in side-gated graphene constrictions

Cited by in corpus (5)

• Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior
• Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates
• Reactive-Ion-Etched Graphene Nanoribbons on a Hexagonal Boron Nitride Substrate
• Characterizing wave functions in graphene nanodevices: electronic transport through ultrashort graphene constrictions on a boron nitride substrate
• Multi-wavelength Raman Spectroscopy of Ultra-narrow Nanoribbons Made by Solution-mediated Bottom-up Approach