Transport gap in side-gated graphene constrictions

Abstract

We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized states. We study the effect of an applied side gate voltage on the transport gap and show that high side gate voltages lift the suppression of the conductance. Finally we study the effect of an applied magnetic field and demonstrate the presence of edge states in the constriction.

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Cited by in corpus (3)

• Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene
• Graphene quantum dots: Beyond a Dirac billiard
• Electron-Hole Crossover in Graphene Quantum Dots