Spin Valve Effect in ZigZag Graphene Nanoribbons by Defect Engineering

Abstract

We report on the possibility for a spin valve effect driven by edge defect engineering of zigzag graphene nanoribbons. Based on a mean-field spin unrestricted Hubbard model, electronic band structures and conductance profiles are derived, using a self-consistent scheme to include gate-induced charge density. The use of an external gate is found to trigger a semiconductor-metal transition in clean zigzag graphene nanoribbons, whereas it yields a closure of the spin-split bandgap in the presence of Klein edge defects. These features could be exploited to make novel charge and spin based switches and field effect devices.

4 pages, 4 figures

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• Topological edge states of a graphene zigzag nanoribbon with spontaneous edge magnetism
• Gapped Ferromagnetic Graphene Nanoribbons
• Mechanically-Induced Transport Switching Effect in Graphene-based Nanojunctions
• Bistability of zigzag edge magnetism in graphene nanoribbons induced by electric field
• Zigzag nanoribbon of gated bilayer hexagonal crystals with spontaneous edge magnetism