Mechanically-Induced Transport Switching Effect in Graphene-based Nanojunctions
arXiv:1102.4627 · doi:10.1103/PhysRevB.83.241405
Abstract
We report a theoretical study suggesting a novel type of electronic switching effect, driven by the geometrical reconstruction of nanoscale graphene-based junctions. We considered junction struc- tures which have alternative metastable configurations transformed by rotations of local carbon dimers. The use of external mechanical strain allows a control of the energy barrier heights of the potential profiles and also changes the reaction character from endothermic to exothermic or vice-versa. The reshaping of the atomic details of the junction encode binary electronic ON or OFF states, with ON/OFF transmission ratio that can reach up to 10^4-10^5. Our results suggest the possibility to design modern logical switching devices or mechanophore sensors, monitored by mechanical strain and structural rearrangements.
10 pages, 4 figures
References in corpus (20)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Half-Metallic Graphene Nanoribbons
- Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
- A tight-binding approach to uniaxial strain in graphene
- All-graphene integrated circuits via strain engineering
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Thermoelectric and Magnetothermoelectric Transport Measurements of Graphene
- Mechanically-Controlled Binary Conductance Switching of a Single-Molecule Junction
- Crystallographic Etching of Few-Layer Graphene
- Charge Transport in Disordered Graphene-Based Low Dimensional Materials
- Etching of Graphene Devices with a Helium Ion Beam
- Coherent electron transport through an azobenzene molecule: A light-driven molecular switch
- Vibrational modes and low-temperature thermal properties of graphene and carbon nanotubes: A minimal force-constant model
- Quantum pumping in graphene
- Current Status of Graphene Transistors
- Quantum pumping with adiabatically modulated barriers in graphene
- AC transport in graphene-based Fabry-Perot devices
- Spin Valve Effect in ZigZag Graphene Nanoribbons by Defect Engineering
- Polarization Induced Switching Effect in Graphene Nanoribbon Edge-Defect Junction