Crystallographic Etching of Few-Layer Graphene

Abstract

We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 micron) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.

References in corpus (5)

• Electric Field Effect in Atomically Thin Carbon Films
• Graphene Nano-Ribbon Electronics
• Atomic Structure of Graphene on SiO2
• Quantum conductance of graphene nanoribbons with edge defects
• Effect of Edge Roughness on Electronic Transport in Graphene Nanoribbon Channel Metal Oxide Semiconductor Field-Effect Transistors

Cited by in corpus (6)

• Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene
• Intrinsic Half-Metallicity in Modified Graphene Nanoribbons
• Etching of Graphene Devices with a Helium Ion Beam
• Computational Study of Tunneling Transistor Based on Graphene Nanoribbon
• Interfaces Within Graphene Nanoribbons
• Defect-induced ferromagnetism in fullerenes