Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

Abstract

Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its symmetric bandstructure, light effective mass, and monolayer-thin body. In this work, we examine the device physics of p-i-n GNR tunneling FETs using atomistic quantum transport simulations. The important role of the edge bond relaxation in the device characteristics is identified. The device, however, has ambipolar I-V characteristics, which are not preferred for digital electronics applications. We suggest that using either an asymmetric source-drain doping or a properly designed gate underlap can effectively suppress the ambipolar I-V. A subthreshold slope of 14mV/dec and a significantly improved on-off ratio can be obtained by the p-i-n GNR tunneling FETs.

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• Introduction to Graphene Electronics -- A New Era of Digital Transistors and Devices
• Theoretical Study of Phosphorene Tunneling Field Effect Transistors
• Accurate six-band nearest-neighbor tight-binding model for the pi-bands of bulk graphene and graphene nanoribbons
• Disorder effects on energy bandgap and electronic transport in graphene-nanomesh-based structures
• First Principles Study of Metal Contacts to Monolayer Black Phosphorous
• Dissipative Transport in Rough Edge Graphene Nanoribbon Tunnel Transistors
• Impact of Edge States on Device Performance of Phosphorene Heterojunction Tunneling Field Effect Transistors
• Dependence of transport on adatom location for armchair-edge graphene nanoribbons
• Room Temperature Optically and Magnetically Active Edges in Phosphorene Nanoribbons
• Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering
• PAW mediated ab initio simulations on linear response phonon dynamics of anisotropic black phosphorous monolayer for thermoelectric applications