285 citations · 854 across the 9 of their papers we have counts for
9 papers
Ferroelectric Antiferromagnetic Quantum Anomalous Hall Insulator in TwoDimensional van der Waals Materials
Yan Liang, Fulu Zheng, Thomas Frauenheim +1
Ferroelectricity, anti-ferromagnetism (AFM) and quantum anomalous Hall effect (QAHE) are three fundamental phenomena in the field of condensed matter physics, which could enable th…
Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates
Meng Qi, Guowang Li, Satyaki Ganguly +8
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double hete…
Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes
Meng Qi, Guowang Li, Vladimir Protasenko +10
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual ma…
Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates
Wan Sik Hwang, Pei Zhao, Kristof Tahy +11
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap…
SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor
Pei Zhao, Randall M. Feenstra, Gong Gu +1
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The…
Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior
Wan Sik Hwang, Maja Remskar, Rusen Yan +9
We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs…