Modeling edge effects in Graphene Nanoribbon Field-effect Transistors with real and mode space methods

Abstract

A computationally efficient mode space simulation method for atomistic simulation of a graphene nanoribbon field-effect transistor in the ballistic limits is developed. The proposed simulation scheme, which solves the nonequilibrium Green's function coupled with a three dimensional Poisson equation, is based on the atomistic Hamiltonian in a decoupled mode space. The mode space approach, which only treats a few modes (subbands), significantly reduces the simulation time. Additionally, the edge bond relaxation and the third nearest neighbor effects are also included in the quantum transport solver. Simulation examples show that, mode space approach can significantly decrease the simulation cost by about an order of magnitude, yet the results are still accurate. This article also demonstrates that the effects of edge bond relaxation and third nearest neighbor significantly influence the transistor's performance and are necessary to be included in the modeling.

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• Disorder effects on energy bandgap and electronic transport in graphene-nanomesh-based structures
• Quantum pumping in graphene nanoribbons at resonant transmission
• Valley filtering in strain-induced $\alpha$-${\mathcal{T}}_3$ quantum dots
• Influence of Metal-Graphene Contact on the Operation and Scalability of Graphene Field-Effect-Transistors
• Effects of disorder and contacts on transport through graphene nanoribbons
• Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering
• Electronic Properties of $\alpha -{\mathcal{T}}_3$ Quantum Dots in Magnetic Fields