550 citations · 1.7k across the 9 of their papers we have counts for
9 papers
Thermodynamic Studies of \b{eta}-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate
Hong Zhou, Kerry Maize, Jinhyun Noh +2
The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliabilit…
Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications
Jingkai Qin, Gang Qiu, Jie Jian +9
Selenium has attracted intensive attention as a promising material candidate for future optoelectronic applications. However, selenium has a strong tendency to grow into nanowire f…
-GaO Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications
Mengwei Si, Lingming Yang, Hong Zhou +1
Steep-slope -GaO nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric sta…
Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors
Mengwei Si, Chun-Jung Su, Chunsheng Jiang +8
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec…
\b{eta}-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5 A/mm and Their Self-heating Effect
Hong Zhou, Kerry Maize, Gang Qiu +2
We have demonstrated that depletion/enhancement-mode b-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a hi…
High Performance Depletion/Enhancement-Mode beta-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm
Hong Zhou, Mengwei Si, Sami Alghmadi +3
In this letter, we report on high performance depletion/enhancement (D/E)-mode beta-Ga2O3 on insulator (GOOI) field-effect transistors (FETs) with record high drain currents (ID) o…
Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
Yuchen Du, Lingming Yang, Hong Zhou +1
In this letter, a new approach to chemically dope black phosphorus (BP) is presented, which significantly enhances the device performance of BP field-effect transistors for an init…
Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5
Gang Qiu, Yuchen Du, Adam Charnas +7
Transition metal pentatelluride ZrTe5 is a versatile material in condensed-matter physics and has been intensively studied since the 1980s. The most fascinating feature of ZrTe5 is…
Weak Localization in Few-Layer Black Phosphorus
Yuchen Du, Adam T. Neal, Hong Zhou +1
We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mo…