most citedSteep-slope Hysteresis-free Negative Capacitance MoS2 Transistors

550 citations · 1.7k across the 9 of their papers we have counts for

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cond-mat.mtrl-sci2017★ 274 cited

Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications

Jingkai Qin, Gang Qiu, Jie Jian +9

Selenium has attracted intensive attention as a promising material candidate for future optoelectronic applications. However, selenium has a strong tendency to grow into nanowire f…

cond-mat.mtrl-sci2017★ 52 cited

-GaO Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications

Mengwei Si, Lingming Yang, Hong Zhou +1

Steep-slope -GaO nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric sta…

cond-mat.mtrl-sci2016★ 61 cited

Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping

Yuchen Du, Lingming Yang, Hong Zhou +1

In this letter, a new approach to chemically dope black phosphorus (BP) is presented, which significantly enhances the device performance of BP field-effect transistors for an init…

cond-mat.mtrl-sci2016★ 105 cited

Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5

Gang Qiu, Yuchen Du, Adam Charnas +7

Transition metal pentatelluride ZrTe5 is a versatile material in condensed-matter physics and has been intensively studied since the 1980s. The most fascinating feature of ZrTe5 is…

cond-mat.mtrl-sci2016★ 18 cited

Weak Localization in Few-Layer Black Phosphorus

Yuchen Du, Adam T. Neal, Hong Zhou +1

We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mo…