Scaled indium oxide transistors fabricated using atomic layer deposition

Abstract

In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scaling of silicon-based devices and the development of alternative semiconductor channel materials that are compatible with current fabrication processes is challenging. Here we report atomic-layer-deposited indium oxide transistors with channel lengths down to 8 nm, channel thicknesses down to 0.5 nm and equivalent dielectric oxide thickness down to 0.84 nm. Due to the scaled device dimensions and low contact resistance, the devices exhibit high on-state currents of 3.1 A/mm at a drain voltage of 0.5 V and a transconductance of 1.5 S/mm at a drain voltage 1 V. Our devices are a promising alternative channel material for scaled transistors with back-end-of-line processing compatibility.

arXiv comment30 pages, 9 figures. Nat Electron (2022)

References in corpus (5)

• High Current Density in Monolayer MoS${}_2$ Doped by AlO${}_x$
• Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?
• Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating
• Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V
• High-frequency, scaled MoS2 transistors

Cited by in corpus (4)

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• A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current
• Growth and applications of two-dimensional single crystals
• Two-dimensional Indium Oxide at the Epitaxial Graphene/SiC Interface: Synthesis, Structure, Properties, and Devices