304 citations · 685 across the 9 of their papers we have counts for
9 papers
200 mm Wafer-Scale Monolithic 3D Integration of Atomic Layer-Deposited Oxide Semiconductors
Chang Niu, Linjia Long, Luqi Zheng +9
Monolithic 3D (M3D) integration offers a pathway to overcome the scaling limits of conventional silicon complementary metal-oxide-semiconductor (CMOS) technology by extending dense…
Breakdown of Ohm's Law by Disorders in Low-Dimensional Transistors
Chang Niu, Adam Charnas, Jian-Yu Lin +4
Ohm's law provides a fundamental framework for understanding charge transport in conductors and underpins the concept of electrical scaling that has enabled the continuous advancem…
Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium
Chang Niu, Linjia Long, Yizhi Zhang +6
The ongoing demand for more energy-efficient, high-performance electronics is driving the exploration of innovative materials and device architectures, where interfaces play a cruc…
Experimental Investigation of Variations in Polycrystalline Hf0.5Zr0.5O2 (HZO)-based MFIM
Tae Ryong Kim, Revanth Koduru, Zehao Lin +2
Device-to-device variations in ferroelectric (FE) hafnium oxide (HfO2)-based devices pose a crucial challenge that limits the otherwise promising capabilities of this technology. A…
A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current
Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao +12
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process.…
A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current
Zehao Lin, Mengwei Si, Vahid Askarpour +12
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio freque…
Scaled indium oxide transistors fabricated using atomic layer deposition
Mengwei Si, Zehao Lin, Zhizhong Chen +3
In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scalin…
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?
Mengwei Si, Yaoqiao Hu, Zehao Lin +7
In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to…
Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V
Mengwei Si, Zehao Lin, Adam Charnas +1
In this work, we demonstrate scaled back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm,…