304 citations · 685 across the 9 of their papers we have counts for
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physics.app-ph2024
Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium
Chang Niu, Linjia Long, Yizhi Zhang +6
The ongoing demand for more energy-efficient, high-performance electronics is driving the exploration of innovative materials and device architectures, where interfaces play a cruc…
physics.app-ph2024
Experimental Investigation of Variations in Polycrystalline Hf0.5Zr0.5O2 (HZO)-based MFIM
Tae Ryong Kim, Revanth Koduru, Zehao Lin +2
Device-to-device variations in ferroelectric (FE) hafnium oxide (HfO2)-based devices pose a crucial challenge that limits the otherwise promising capabilities of this technology. A…