304 citations · 685 across the 9 of their papers we have counts for
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cond-mat.mtrl-sci2020★ 223 cited
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?
Mengwei Si, Yaoqiao Hu, Zehao Lin +7
In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to…
cond-mat.mtrl-sci2020★ 83 cited
Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V
Mengwei Si, Zehao Lin, Adam Charnas +1
In this work, we demonstrate scaled back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm,…