304 citations · 1.1k across the 6 of their papers we have counts for
6 papers
Scaled indium oxide transistors fabricated using atomic layer deposition
Mengwei Si, Zehao Lin, Zhizhong Chen +3
In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scalin…
Van der Waals Ferromagnetic Josephson Junctions
Linfeng Ai, Enze Zhang, Ce Huang +11
Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetis…
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?
Mengwei Si, Yaoqiao Hu, Zehao Lin +7
In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to…
In-plane magnetic domains and Néel-like domain walls in thin flakes of the room temperature CrTe van der Waals ferromagnet
Anike Purbawati, Johann Coraux, Jan Vogel +17
The recent discovery of magnetic van der Waals materials has triggered a wealth of investigations in materials science, and now offers genuinely new prospects for both fundamental…
Room temperature 2D ferromagnetism in few-layered 1-CrTe
Xingdan Sun, Wanying Li, Xiao Wang +21
Spin-related electronics using two dimensional (2D) van der Waals (vdW) materials as a platform are believed to hold great promise for revolutionizing the next generation spintroni…
Gate tunable giant anisotropic resistance in ultra-thin GaTe
Hanwen Wang, Mao-Lin Chen, Mengjian Zhu +19
In crystals, the duplication of atoms often follows different periodicity along different directions. It thus gives rise to the so called anisotropy, which is usually even more pro…