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M. Si

17 papers hereh-index 397.2k citations176 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author9
  • middle author8

Across the 17 of 17 papers where every author was matched, so the position is known.

fields
  • physics.app-ph7
  • cond-mat.mes-hall5
  • cond-mat.mtrl-sci5
same name
  • M. Si — 7 papers, h 9
  • M. Si — 6 papers, h 4
  • M. Si — 2 papers, h 28
  • M. Si — 1 paper, h 2
  • M. Si — 1 paper
  • M. Si — 1 paper, h 12

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20172022
most citedScaled indium oxide transistors fabricated using atomic layer deposition

304 citations · 926 across the 8 of their papers we have counts for

collaborators
Showing 2018Show all

2 papers · 1 filter

physics.app-ph2018

On the Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in Ferroelectric/Dielectric Stack

Mengwei Si, Xiao Lyu, Peide D. Ye

The ferroelectric polarization switching in ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) in the HZO/Al2O3 ferroelectric/dielectric stack is investigated systematically…

physics.app-ph2018

A Ferroelectric Semiconductor Field-Effect Transistor

Mengwei Si, Atanu K. Saha, Shengjie Gao +9

Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the dev…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.