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M. Si

17 papers hereh-index 397.2k citations176 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author9
  • middle author8

Across the 17 of 17 papers where every author was matched, so the position is known.

fields
  • physics.app-ph7
  • cond-mat.mes-hall5
  • cond-mat.mtrl-sci5
same name
  • M. Si — 7 papers, h 9
  • M. Si — 6 papers, h 4
  • M. Si — 2 papers, h 28
  • M. Si — 1 paper, h 2
  • M. Si — 1 paper
  • M. Si — 1 paper, h 12

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20172022
most citedScaled indium oxide transistors fabricated using atomic layer deposition

304 citations · 926 across the 8 of their papers we have counts for

collaborators
Showing 2021Show all

3 papers · 1 filter

cond-mat.mes-hall2021

Bilayer Quantum Hall States in an n-type Wide Tellurium Quantum Well

Chang Niu, Gang Qiu, Yixiu Wang +3

Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n…

cond-mat.mes-hall2021★ 29 cited

The Critical Role of Charge Balance on the Memory Characteristics of Ferroelectric Field-Effect Transistors

Mengwei Si, Peide D. Ye

Ferroelectric field-effect transistors (Fe-FETs) with ferroelectric hafnium oxide (FE HfO2) as gate insulator are being extensively explored as a promising device candidate for thr…

physics.app-ph2021

Multi-domain Polarization Switching in Hf0.5Zr0.5O2-Dielectric Stack: The Role of Dielectric Thickness

Atanu K. Saha, Mengwei Si, Peide D. Ye +1

We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE)…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.