M. Si

activity

20172022

most citedScaled indium oxide transistors fabricated using atomic layer deposition

304 citations · 926 across the 8 of their papers we have counts for

collaborators

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1 paper · 1 filter

cond-mat.mtrl-sci2017★ 52 cited

$β$ -Ga $_{2}$ O $_{3}$ Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications

Mengwei Si, Lingming Yang, Hong Zhou +1

Steep-slope $β$ -Ga $_{2}$ O $_{3}$ nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric sta…

β-Ga2​O3​ Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications

$β$ -Ga $_{2}$ O $_{3}$ Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications