304 citations · 926 across the 8 of their papers we have counts for
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Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?
Mengwei Si, Yaoqiao Hu, Zehao Lin +7
In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to…
Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V
Mengwei Si, Zehao Lin, Adam Charnas +1
In this work, we demonstrate scaled back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm,…
Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating
Mengwei Si, Joseph Andler, Xiao Lyu +4
In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-curre…
-InSe based Ferroelectric-Semiconductor Metal Junction for Non-Volatile Memories
Atanu K. Saha, Mengwei Si, Peide Ye +1
In this work, we theoretically and experimentally investigate the working principle and non-volatile memory (NVM) functionality of 2D -InSe based ferroelectric-semicondu…
Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires
Jing-Kai Qin, Pai-Ying Liao, Mengwei Si +15
Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physica…