Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides

Abstract

Van der Waals (vdW) materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not only combine characteristics of the individual building blocks, but can also exhibit emergent physical properties absent in the parent compounds through interlayer interactions. Here we report on a new family of emergent, nanometer-thick, semiconductor 2D ferroelectrics, where the individual constituents are well-studied non-ferroelectric monolayer transition metal dichalcogenides (TMDs), namely WSe2, MoSe2, WS2, and MoS2. By stacking two identical monolayer TMDs in parallel, we obtain electrically switchable rhombohedral-stacking configurations, with out-of-plane polarization that is flipped by in-plane sliding motion. Fabricating nearly-parallel stacked bilayers enables the visualization of moiré ferroelectric domains as well as electric-field-induced domain wall motion with piezoelectric force microscopy (PFM). Furthermore, by using a nearby graphene electronic sensor in a ferroelectric field transistor geometry, we quantify the ferroelectric built-in interlayer potential, in good agreement with first-principles calculations. The novel semiconducting ferroelectric properties of these four new TMDs opens up the possibility of studying the interplay between ferroelectricity and their rich electric and optical properties.

arXiv comment16 pages, 4 figures

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Cited by in corpus (105)

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• Direct observation of geometric and sliding ferroelectricity in an amphidynamic crystal
• Programming Correlated Magnetic States via Gate Controlled Moiré Geometry
• Atypical sliding and Moire ferroelectricity in pure multilayer graphene
• A Microscopic Perspective on Moiré Materials
• Polarization-driven band topology evolution in twisted MoTe${}_2$ and WSe${}_2$
• Across-Layer Sliding Ferroelectricity in Graphene-Based Heterolayers: Asymmetry of Next Neighbor Interlayer Couplings
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• Moire Potential, Lattice Relaxation and Layer Polarization in Marginally Twisted MoS2 Bilayers
• The sliding phase transition in ferroelectric van der Waals bilayers
• Visualizing moiré ferroelectricity via plasmons and nano-photocurrent in graphene/twisted-WSe2 structures
• Emergent properties of van der Waals bilayers revealed by computational stacking
• Selective and Quasi-continuous Switching of Ferroelectric Chern Insulator Device for Neuromorphic Computing
• Parent Berry curvature and the ideal anomalous Hall crystal
• Prediction of ferroelectric superconductors with reversible superconducting diode effect
• Stacking-engineered ferroelectricity and multiferroic order in van der Waals magnets
• A scalable network model for electrically tunable ferroelectric domain structure in twistronic bilayers of two-dimensional semiconductors
• Ferroelectric metals in 1T/1T'-phase transition metal dichalcogenide MTe2 bilayers (M = Pt, Pd, and Ni)
• Achieving ferroelectricity in a centrosymmetric high-performance semiconductor by strain engineering
• Symmetry breaking and anomalous conductivity in a double moiré superlattice
• Band structure engineering using a moiré polar substrate
• Unveiling the origin of unconventional moire ferroelectricity
• Large photo-induced tuning of ferroelectricity in sliding ferroelectrics
• Excitonic signatures of ferroelectric order in parallel-stacked MoS${}_2$
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• Polarization Saturation in Multi-layered Interfacial Ferroelectrics
• Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2
• Gate-tunable topological phases in superlattice modulated bilayer graphene
• Visualizing the microscopic origins of topology in twisted molybdenum ditelluride
• Photo-magnetization in two-dimensional sliding ferroelectrics
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• Strong-coupling phases of trions and excitons in electron-hole bilayers at commensurate densities
• Designing topology and fractionalization in narrow gap semiconductor films via electrostatic engineering
• Experimental signature of layer skyrmions and implications for band topology in twisted WSe2 bilayers
• Recent Advances in Unconventional Ferroelectrics and Multiferroics
• Distinct moiré textures of in-plane electric polarizations for distinguishing moiré origins in homobilayers
• Domain-dependent surface adhesion in twisted few-layer graphene: Platform for moiré-assisted chemistry
• Slippery paraelectric transition metal dichalcogenide bilayers
• Phonon chirality manipulation mechanism in TMD interlayer-sliding ferroelectrics
• Robust Zeeman-type band splitting in sliding ferroelectrics
• Creating a three dimensional intrinsic electric dipole on rotated CrI${}_3$ bilayers
• Planar Hall Effect in Quasi-Two-Dimensional Materials
• Auto-resolving the atomic structure at van der Waals interfaces using a generative model
• Magnetoelectric effect in van der Waals magnets
• Perspective on 2D perovskite ferroelectrics and multiferroics
• Negative piezoelectricity in quasi-two/one-dimensional ferroelectrics
• Indium selenides for next-generation low-power computing devices
• Band alignment and interlayer hybridisation in transition metal dichalcogenide/hexagonal boron nitride heterostructures
• Topological Valley Transport in Bilayer Graphene Induced by Interlayer Sliding
• Quantum-Geometric Origin of Out-of-plane Stacking Ferroelectricity
• Sliding Ferroelectricity Induced and Switched Altermagnetism in GaSe-VPSe3-GaSe Sandwiched Heterostructure with Strong Magnetoelectric Effect
• Ubiquitous van der Waals altermagnetism with sliding/moire ferroelectricity
• Flat and tunable moire phonons in twisted transition-metal dichalcogenides
• Layer photovoltaic effect in van der Waals heterostructures
• Asymmetric dynamical charges in two-dimensional ferroelectrics
• Quasi-one-dimensional sliding ferroelectricity in NbI${}_4$
• Extrinsic n-type semiconductor transition in ZrSe2 with the metallic character through hafnium substitution
• Combining intrinsic and sliding-induced polarizations for multistates in two dimensional ferroelectrics
• Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moire superlattice of transition metal dichalcogenides
• Ferroelectricity in twisted double bilayer graphene
• Intrinsic Dipole Hall effect in twisted MoTe${}_2$: magnetoelectricity and contact-free signatures of topological transitions
• Superlubric sliding ferroelectricity
• Moiré Band Engineering in Twisted Trilayer WSe2
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• Plasmonic polarization sensing of electrostatic superlattice potentials
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• Controllable spin splitting in 2D Ferroelectric few-layer ${$γ}$-GeSe
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• Two-dimensional electrons at mirror and twistronic twin boundaries in van der Waals ferroelectrics
• Moiré flat bands and antiferroelectric domains in lattice relaxed twisted bilayer hexagonal boron nitride under perpendicular electric fields
• Förster valley-orbit coupling and topological lattice of hybrid moiré excitons
• Twistronics and moiré superlattice physics in 2D transition metal dichalcogenides
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• Probing complex stacking in a layered material via electron-nuclear quadrupolar coupling
• Revealing Atomic-Scale Switching Pathways in van der Waals Ferroelectrics
• Mesoscopic Stacking Reconfigurations in Stacked van der Waals Film
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• Interlayer couplings in homobilayer structures of MSi2X4 (M = Mo/W, X = N/P/As)
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