Mesoscopic Stacking Reconfigurations in Stacked van der Waals Film
arXiv:2402.12773 · doi:10.1002/smll.202306296
Abstract
Mesoscopic-scale stacking reconfigurations are investigated when van der Waals films are stacked. We have developed a method to visualize complicated stacking structures and mechanical distortions simultaneously in stacked atom-thick films using Raman spectroscopy. In the rigid limit, we found that the distortions originate from the transfer process, which can be understood through thin film mechanics with a large elastic property mismatch. In contrast, with atomic corrugations, the in-plane strain fields are more closely correlated with the stacking configuration, highlighting the impact of atomic reconstructions on the mesoscopic scale. We discovered that the grain boundaries don`t have a significant effect while the cracks are causing inhomogeneous strain in stacked polycrystalline films. This result contributes to understanding the local variation of emerging properties from moiré structures and advancing the reliability of stacked vdW material fabrication.
arXiv comment38 pages, 23 figures
References in corpus (26)
- Atomically thin MoS2: A new direct-gap semiconductor
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
- Phonons in single and few-layer MoS2 and WS2
- Magic continuum in twisted bilayer WSe2
- Atomic and electronic reconstruction at van der Waals interface in twisted bilayer graphene
- Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2
- Abundance of correlated insulating states at fractional fillings of WSe/WS moiré superlattices
- Lattice relaxation and energy band modulation in twisted bilayer graphenes
- Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides
- Ultraflat bands and shear solitons in Moiré patterns of twisted bilayer transition metal dichalcogenides
- Atomic reconstruction in twisted bilayers of transition metal dichalcogenides
- Interfacial ferroelectricity in marginally twisted 2D semiconductors
- Excitation energy dependent Raman spectrum of MoSe2
- Moiré Excitons Correlated with Superlattice Structure in Twisted WSe/WSe Homobilayers
- Achieving Large, Tunable Strain in Monolayer Transition-Metal Dichalcogenides
- Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS, WSe and WTe
- Raman Signatures of Polytypism in Molybdenum Disulfide
- Twist engineering of the two-dimensional magnetism in double bilayer chromium triiodide homostructures
- Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition
- Strain-shear coupling in bilayer MoS2
- Stress Transfer Mechanisms at the Submicron Level for Graphene/Polymer Systems
- Excitons in mesoscopically reconstructed moiré heterostructures
- Phonons in Twisted Transition Metal Dichalcogenide Bilayers ("Twistnonics"): Ultra-soft Phasons, and a transition from Superlubric to Pinned Phase
- Large-scale mapping of moiré superlattices by Raman imaging of interlayer breathing mode and moiré phonons
- Raman imaging of twist angle variations in twisted bilayer graphene at intermediate angles