Combining intrinsic and sliding-induced polarizations for multistates in two dimensional ferroelectrics
arXiv:2403.11813 · doi:10.1103/PhysRevB.111.L081407
Abstract
Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric (FE) memory devices toward ultra-high-density information storage. Here, we propose to build multistates by combining the intrinsic and sliding-induced polarizations. The physics is that there is at least one order of magnitude difference in the energy barriers between these two types of polarization, which leads to a significant difference in the electric fields for reversing the polarization. This difference, along with the symmetry breaking, allows for a unique flipping mechanism involving layer-by-layer sliding followed by layer-by-layer flipping during the transformation of the multistates. As a result, six and ten switchable states can be achieved for the 1T" bilayers and trilayers, respectively. We further illustrate the concept in H-stacking bilayers and trilayers of 1T" transition-metal dichalcogenides by first-principles calculations. Our study provides a new route to design novel polarization states for developing next-generation memory devices.
7 pages, 4 figures
References in corpus (12)
- Physics of thin-film ferroelectric oxides
- Out-of-plane Piezoelectricity and Ferroelectricity in Layered -In2Se3 Nano-flakes
- Interfacial Ferroelectricity by van-der-Waals Sliding
- Robust Ferroelectricity in Monolayer Group-IV Monochalcogenides
- Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides
- Purely in-plane ferroelectricity in monolayer SnS at room temperature
- Microscopic manipulation of ferroelectric domains in SnSe monolayers at room temperature
- General Theory for Bilayer Stacking Ferroelectricity
- Atypical sliding and Moire ferroelectricity in pure multilayer graphene
- Two-dimensional antiferroelectric tunnel junction
- Large Family of Two-Dimensional Ferroelectric Metals Discovered via Machine Learning
- Interface engineering of ferroelectricity in thin films of thiophosphate ABP 2 X 6 (A = Cu, Ag; B = In, Bi, Cr, V; and X = S, Se)