Zhiqiang Tian

Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric (FE) memory devices toward ultra-high-density information st…

cond-mat.mtrl-sci2024★ 13 cited

Ferroelectrically tunable topological phase transition in In $_{2}$ Se $_{3}$ thin films

Zhiqiang Tian, Ziming Zhu, Jiang Zeng +4

Materials with ferroelectrically switchable topological properties are of interest for both fundamental physics and practical applications. Using first-principles calculations, we…

cond-mat.mtrl-sci2024★ 6 cited

Doping induced multiferroicity and quantum anomalous Hall effect in $α$ -In $_{2}$ Se $_{3}$ thin films

Zhiqiang Tian, Jin-Yang Li, Tao Ouyang +5

In flat-band materials, the strong Coulomb interaction between electrons can lead to exotic physical phenomena. Recently, $α$ -In $_{2}$ Se $_{3}$ thin films were found to possess ferroele…

cond-mat.mtrl-sci2023★ 18 cited

Ferroelectrically switchable magnetic multistates in MnBi $_{2}$ Te $_{4}$ (Bi $_{2}$ Te $_{3}$ ) $_{n}$ and MnSb $_{2}$ Te $_{4}$ (Sb $_{2}$ Te $_{3}$ ) $_{n}$ (n = 0, 1) thin films

Guoliang Yu, Chuhan Tang, Zhiqiang Tian +4

Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBi $_{2}$ T…

Combining intrinsic and sliding-induced polarizations for multistates in two dimensional ferroelectrics

Ferroelectrically tunable topological phase transition in In2​Se3​ thin films

Doping induced multiferroicity and quantum anomalous Hall effect in α-In2​Se3​ thin films

Ferroelectrically switchable magnetic multistates in MnBi2​Te4​(Bi2​Te3​)n​ and MnSb2​Te4​(Sb2​Te3​)n​ (n = 0, 1) thin films

Ferroelectrically tunable topological phase transition in In $_{2}$ Se $_{3}$ thin films

Doping induced multiferroicity and quantum anomalous Hall effect in $α$ -In $_{2}$ Se $_{3}$ thin films

Ferroelectrically switchable magnetic multistates in MnBi $_{2}$ Te $_{4}$ (Bi $_{2}$ Te $_{3}$ ) $_{n}$ and MnSb $_{2}$ Te $_{4}$ (Sb $_{2}$ Te $_{3}$ ) $_{n}$ (n = 0, 1) thin films