33 citations · 159 across the 10 of their papers we have counts for
10 papers
KPROJ: A Program for Unfolding Electronic and Phononic Bands
Jiaxin Chen, M. Weinert, Mingxing Chen
We introduce a program named KPROJ that unfolds the electronic and phononic band structure of materials modeled by supercells. The program is based on the -projection m…
Evolution of flat bands in MoSe/WSe moiré lattices: A study combining machine learning and band unfolding methods
Shengguo Yang, Jiaxin Chen, Chao-Fei Liu +1
Moiré lattices have served as the ideal quantum simulation platform for exploring novel physics due to the flat electronic bands resulting from the long wavelength moiré potentials…
Combining intrinsic and sliding-induced polarizations for multistates in two dimensional ferroelectrics
Chuhan Tang, Zhiqiang Tian, Tao Ouyang +2
Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric (FE) memory devices toward ultra-high-density information st…
Doping induced multiferroicity and quantum anomalous Hall effect in -InSe thin films
Zhiqiang Tian, Jin-Yang Li, Tao Ouyang +5
In flat-band materials, the strong Coulomb interaction between electrons can lead to exotic physical phenomena. Recently, -InSe thin films were found to possess ferroele…
Vertical Ferroelectricity in Van der Waals Materials: Models and Devices
Yuwen Zhang, Chunfeng Cui, Chaoyu He +4
Ferroelectricity has a wide range of applications in functional electronics and is extremely important for the development of next-generation information storage technology, but it…
Ferroelectrically switchable magnetic multistates in MnBiTe(BiTe) and MnSbTe(SbTe) (n = 0, 1) thin films
Guoliang Yu, Chuhan Tang, Zhiqiang Tian +4
Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBiT…
Interface engineering of ferroelectricity in thin films of thiophosphate ABP 2 X 6 (A = Cu, Ag; B = In, Bi, Cr, V; and X = S, Se)
Guoliang Yu, Anlian Pan, Mingxing Chen
Two-dimensional ferroelectrics (FEs) are promising in the miniaturization of memory devices with ultra-high-density data storage and low power consumption. However, many thiophosph…
Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors
Ao Zhang, Kaike Yang, Yun Zhang +2
Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the…
Effects of substrate-surface reconstruction and orientation on spin-valley polarization in MoTe/EuO
Ao Zhang, Zisheng Gong, Ziming Zhu +2
We investigate the spin-valley polarization in MoTe monolayer on (111) and (001) surfaces of ferromagnetic semiconductor EuO based on first-principles calculations. We consider…
Prediction of giant and ideal Rashba-type splitting in ordered alloy monolayers grown on a polar surface
Mingxing Chen, Feng Liu
A large and ideal Rashba-type spin-orbit splitting is desired for the applications of materials in spintronic devices and the detection of Majorana Fermions in solids. Here, we pro…