paper

Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moire superlattice of transition metal dichalcogenides

arXiv:2405.18024 · doi:10.1021/acs.nanolett.4c01755

Abstract

At near-parallel orientation, twisted bilayer of transition metal dichalcogenides exhibit inter-layer charge transfer-driven out-of-plane ferroelectricity that may lead to unique electronic device architectures. Here we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on 3R stacked twisted bilayer of WSe2 at a twist angle of 2.1 degree. We observe hysteretic transfer characteristics and an emergent charge inhomogeneity with multiple local Dirac points as the electric displacement field (D) is increased. Concomitantly, we also observe a strong non-local voltage signal at D = 0 V/nm that decreases rapidly with increasing D. A linear scaling of the non-local signal with longitudinal resistance suggests edge mode transport, which we attribute to the breaking of valley symmetry of the graphene channel due to the spatially fluctuating electric field from the moire domains of the underlying twisted WSe2. A quantitative analysis connecting the non-locality and channel inhomogeneity suggests emergence of finite-size domains in the graphene channel that modulate the charge and the valley currents simultaneously. This work underlines efficient control and impact of interfacial ferroelectricity that can trigger a new genre of devices for twistronic applications.

arXiv comment16 pages, 15 figures

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