Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement

Abstract

We discuss the residual carrier density (n*) near the Dirac point (DP) in graphene estimated by quantum capacitance (CQ) and conductivity measurements. The CQ at the DP has a finite value and is independent of the temperature. A similar behavior is also observed for the conductivity at the DP, because their origin is residual carriers induced externally by charged impurities. The n* extracted from CQ, however, is often smaller than that from the conductivity, suggesting that the mobility in the puddle region is lower than that in the linear region. The CQ measurement should be employed for estimating n* quantitatively.

APL 2013

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• Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators
• Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs
• Ground state magnetization of conduction electrons in graphene with Zeeman effect
• Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica
• Effect of weak impurities on electronic properties of graphene: functional renormalization-group analysis
• Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moire superlattice of transition metal dichalcogenides
• Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
• Inhomogeneous screening of gate electric field by interface states in graphene FETs