Effect of weak impurities on electronic properties of graphene: functional renormalization-group analysis

Abstract

We consider an effect of weak impurities on electronic properties of graphene within the functional renormalization-group approach. The energy dependences of the electronic self-energy and density of states near the neutrality point are discussed. Depending on the symmetry of the impurities, the electronic damping $\Gamma$ and density of states $\rho$ can deviate substantially from those given by the self-consistent Born approximation. We investigate the crossover from the results of the self-consistent Born approximation, which are valid far from the neutrality point to the strong-coupling (diffusive) regime near the neutrality point. For impurities, which are diagonal in both, valley and sublattice indices, we obtain finite density of states at the Fermi level with the values, which are much bigger than the results of the self-consistent Born approximation.

4+1 pages, 5 figures

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Cited by in corpus (8)

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• Soliton fractional charge of disordered graphene nanoribbon
• Mutual information and correlations across topological phase transitions in topologically ordered graphene zigzag nanoribbons
• Magnetic, charge, and transport properties of graphene nanoflakes
• Fate of superconductivity in disordered Dirac and semi-Dirac semimetals
• A functional renormalization group approach to electronic structure calculations for systems without translational symmetry
• Renormalization group analysis of weakly interacting van der Waals Fermi system