Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators

Abstract

We demonstrate a considerable suppression of the low-field leakage through a Y2O3 topgate insulator on graphene by applying high-pressure O2 at 100 atm during post-deposition annealing (HP-PDA). Consequently, the quantum capacitance measurement for the monolayer graphene reveals the largest Fermi energy modulation (EF = ~0.52 eV, i.e., the carrier density of ~2*10^13 cm^-2) in the solid-state topgate insulators reported so far. HP-PDA is the robust method to improve the electrical quality of high-k insulators on graphene.

will appear in APL

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Cited by in corpus (5)

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• Gap state analysis in electric-field-induced band gap for bilayer graphene
• Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition
• Understanding interface properties in 2D heterostructure FETs
• Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs