209 citations · 564 across the 8 of their papers we have counts for
9 papers
Influence of interface dipole layers on the performance of graphene field effect transistors
Naoka Nagamura, Hirokazu Fukidome, Kosuke Nagashio +8
The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensi…
Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics
Nan Fang, Kosuke Nagashio, Akira Toriumi
Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), are expected to be promising for next generation device applications. The existence of sulfur vacancie…
Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica
J. L. Qi, K. Nagashio, T. Nishimura +1
A clean, flat and orientation-identified graphene on a substrate is in high demand for graphene electronics. In this study, the hetero-epitaxial graphene growth on Cu(111)/mica(001…
Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators
Kaoru Kanayama, Kosuke Nagashio, Tomonori Nishimura +1
We demonstrate a considerable suppression of the low-field leakage through a Y2O3 topgate insulator on graphene by applying high-pressure O2 at 100 atm during post-deposition annea…
The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity
Ryota Ifuku, Kosuke Nagashio, Tomonori Nishimura +1
The density of states (DOS) of graphene underneath a metal is estimated through a quantum capacitance measurement of the metal/graphene/SiO2/n+-Si contact structure fabricated by a…
Electrical transport properties of graphene on SiO2 with specific surface structures
K. Nagashio, T. Yamashita, T. Nishimura +2
The mobility of graphene transferred on a SiO2/Si substrate is limited to ~10,000 cm2/Vs. Without understanding the graphene/SiO2 interaction, it is difficult to improve the electr…
DOS-limited contact resistance in graphene FETs
Kosuke Nagashio, Akira Toriumi
Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1.…
Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene FET
Kosuke Nagashio, Tomonori Nishimura, Koji Kita +1
The intrinsic channel properties of monolayer and multilayer graphene were systematically investigated as a function of layer number by the exclusion of contact resistance using fo…
Mobility variations in mono- and multi-layer graphene films
Kosuke Nagashio, Tomonori Nishimura, Koji Kita +1
The electric properties of mono- and multi-layer graphene films were systematically studied with the layer number determined by their optical contrast. The current modulation incre…