Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics

Nan Fang, Kosuke Nagashio, Akira Toriumi

Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), are expected to be promising for next generation device applications. The existence of sulfur vacancie…