393 citations · 420 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2020★ 27 cited
Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage
Taro Sasaki, Keiji Ueno, Takashi Taniguchi +3
The memory window of floating gate (FG) type non-volatile memory (NVM) devices is a fundamental figure of merit used not only to evaluate the performance, such as retention and end…
cond-mat.mtrl-sci2020★ 393 cited
Purely in-plane ferroelectricity in monolayer SnS at room temperature
N. Higashitarumizu, H. Kawamoto, C. -J. Lee +7
2D van der Waals ferroelectric semiconductors have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several…