393 citations · 1.3k across the 10 of their papers we have counts for
11 papers
Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage
Taro Sasaki, Keiji Ueno, Takashi Taniguchi +3
The memory window of floating gate (FG) type non-volatile memory (NVM) devices is a fundamental figure of merit used not only to evaluate the performance, such as retention and end…
Purely in-plane ferroelectricity in monolayer SnS at room temperature
N. Higashitarumizu, H. Kawamoto, C. -J. Lee +7
2D van der Waals ferroelectric semiconductors have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several…
Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica
J. L. Qi, K. Nagashio, T. Nishimura +1
A clean, flat and orientation-identified graphene on a substrate is in high demand for graphene electronics. In this study, the hetero-epitaxial graphene growth on Cu(111)/mica(001…
Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators
Kaoru Kanayama, Kosuke Nagashio, Tomonori Nishimura +1
We demonstrate a considerable suppression of the low-field leakage through a Y2O3 topgate insulator on graphene by applying high-pressure O2 at 100 atm during post-deposition annea…
The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity
Ryota Ifuku, Kosuke Nagashio, Tomonori Nishimura +1
The density of states (DOS) of graphene underneath a metal is estimated through a quantum capacitance measurement of the metal/graphene/SiO2/n+-Si contact structure fabricated by a…
Carrier density modulation in graphene underneath Ni electrode
T. Moriyama, K. Nagashio, T. Nishimura +1
We investigate the transport properties of graphene underneath metal to reveal whether the carrier density in graphene underneath source/drain electrodes in graphene field-effect t…
Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement
K. Nagashio, T. Nishimura, A. Toriumi
We discuss the residual carrier density (n*) near the Dirac point (DP) in graphene estimated by quantum capacitance (CQ) and conductivity measurements. The CQ at the DP has a finit…
Electrical transport properties of graphene on SiO2 with specific surface structures
K. Nagashio, T. Yamashita, T. Nishimura +2
The mobility of graphene transferred on a SiO2/Si substrate is limited to ~10,000 cm2/Vs. Without understanding the graphene/SiO2 interaction, it is difficult to improve the electr…
Contact resistivity and current flow path at metal/graphene contact
K. Nagashio, T. Nishimura, K. Kita +1
The contact properties between metal and graphene were examined. The electrical measurement on a multiprobe device with different contact areas revealed that the current flow prefe…
Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene FET
Kosuke Nagashio, Tomonori Nishimura, Koji Kita +1
The intrinsic channel properties of monolayer and multilayer graphene were systematically investigated as a function of layer number by the exclusion of contact resistance using fo…
Mobility variations in mono- and multi-layer graphene films
Kosuke Nagashio, Tomonori Nishimura, Koji Kita +1
The electric properties of mono- and multi-layer graphene films were systematically studied with the layer number determined by their optical contrast. The current modulation incre…