activity
20082020
most citedPurely in-plane ferroelectricity in monolayer SnS at room temperature

393 citations · 1.3k across the 10 of their papers we have counts for

collaborators

11 papers

cond-mat.mtrl-sci2020★ 27 cited

Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage

Taro Sasaki, Keiji Ueno, Takashi Taniguchi +3

The memory window of floating gate (FG) type non-volatile memory (NVM) devices is a fundamental figure of merit used not only to evaluate the performance, such as retention and end…

cond-mat.mtrl-sci2020★ 393 cited

Purely in-plane ferroelectricity in monolayer SnS at room temperature

N. Higashitarumizu, H. Kawamoto, C. -J. Lee +7

2D van der Waals ferroelectric semiconductors have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several…

cond-mat.mtrl-sci2014★ 13 cited

Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica

J. L. Qi, K. Nagashio, T. Nishimura +1

A clean, flat and orientation-identified graphene on a substrate is in high demand for graphene electronics. In this study, the hetero-epitaxial graphene growth on Cu(111)/mica(001…

cond-mat.mtrl-sci2014★ 25 cited

Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators

Kaoru Kanayama, Kosuke Nagashio, Tomonori Nishimura +1

We demonstrate a considerable suppression of the low-field leakage through a Y2O3 topgate insulator on graphene by applying high-pressure O2 at 100 atm during post-deposition annea…

cond-mat.mtrl-sci2013

The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity

Ryota Ifuku, Kosuke Nagashio, Tomonori Nishimura +1

The density of states (DOS) of graphene underneath a metal is estimated through a quantum capacitance measurement of the metal/graphene/SiO2/n+-Si contact structure fabricated by a…

cond-mat.mes-hall2013★ 20 cited

Carrier density modulation in graphene underneath Ni electrode

T. Moriyama, K. Nagashio, T. Nishimura +1

We investigate the transport properties of graphene underneath metal to reveal whether the carrier density in graphene underneath source/drain electrodes in graphene field-effect t…