Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures

Abstract

Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here, we report an extremely large local magnetoresistance of ~ 2,000% at 400 K and a non-local magnetoresistance of > 90,000% in 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

References in corpus (10)

• The electronic properties of graphene
• Boron nitride substrates for high-quality graphene electronics
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Length-dependent thermal conductivity in suspended single-layer graphene
• Thermoelectric and Magnetothermoelectric Transport Measurements of Graphene
• Dependence of band structures on stacking and field in layered graphene
• Screening and interlayer coupling in multilayer graphene field-effect transistors
• Giant Nonlocality near the Dirac Point in Graphene
• Charge distribution and screening in layered graphene systems
• Negative nonlocal resistance in mesoscopic gold Hall bars: Absence of giant spin Hall effect

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• Theoretical prediction of a giant anisotropic magnetoresistance in carbon nanoscrolls
• Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry
• Heat switch effect in an antiferromagnetic insulator Co${}_3$V${}_2$O${}_8$
• Scale-invariant large nonlocality in polycrystalline graphene
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• Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moire superlattice of transition metal dichalcogenides
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• Thermal transport driven by charge imbalance in graphene in magnetic field, close to the charge neutrality point at low temperature: Non local resistance
• Charge-induced artifacts in non-local spin transport measurements: How to prevent spurious voltage signals
• Linear nonsaturating magnetoresistance in the Nowotny chimney ladder compound Ru${}_2$Sn${}_3$
• Giant anisotropic magnetoresistance in few-layer α-RuCl3 tunnel junctions
• Type-II Dirac cone and Dirac cone protected by nonsymmorphic symmetry in carbon-lithium compound (C4Li)
• Ballistic magnetotransport in graphene
• Origins of Valley Current Reversal in Partially Overlapped Graphene Layers
• Record-Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite
• Magnetoresistance in ZrSi$X$ ($X=$ S, Se, Te) nodal-line semimetals
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