Screening and interlayer coupling in multilayer graphene field-effect transistors

Abstract

With the motivation of improving the performance and reliability of aggressively scaled nano-patterned graphene field-effect transistors, we present the first systematic experimental study on charge and current distribution in multilayer graphene field-effect transistors. We find a very particular thickness dependence for Ion, Ioff, and the Ion/Ioff ratio, and propose a resistor network model including screening and interlayer coupling to explain the experimental findings. In particular, our model does not invoke modification of the linear energy-band structure of graphene for the multilayer case. Noise reduction in nano-scale few-layer graphene transistors is experimentally demonstrated and can be understood within this model as well.

13 pages, 4 figures, 20 references

References in corpus (16)

• Electric Field Effect in Atomically Thin Carbon Films
• Ultrahigh electron mobility in suspended graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Suspended Graphene: a bridge to the Dirac point
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Making graphene visible
• Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
• Tailoring the atomic structure of graphene nanoribbons by STM lithography
• Macroscopic graphene membranes and their extraordinary stiffness
• Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
• Conductance Quantization in Graphene Nanoribbons
• Top-gated graphene field-effect-transistors formed by decomposition of SiC
• Few layers graphene on 6H-SiC(000-1): an STM study
• Electronic transport in locally gated graphene nanoconstrictions
• Charge distribution and screening in layered graphene systems

Cited by in corpus (20)

• The role of contact resistance in graphene field-effect devices
• Interlayer screening effect in graphene multilayers with ABA and ABC stacking
• Impact of Size Effect on Graphene Nanoribbon Transport
• Reliably Counting Atomic Planes of Few-Layer Graphene (n>4)
• High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2
• Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures
• Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS${}_2$ Heterostructures
• Understanding contact gating in Schottky barrier transistors from 2D channels
• Comparison between charge and spin transport in few layer graphene
• Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
• Edge effect on resistance scaling rules in graphene nanostructures
• Signatures of disorder in the minimum conductivity of graphene
• Gate-Voltage Tunability of Plasmons in Single and Multi-layer Graphene Structures: Analytical Description and Concepts for Terahertz Devices
• Van der Waals forces and electron-electron interactions in two strained graphene layers
• Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots
• Thermopower of multilayer graphene
• Thermodynamic properties of tunneling quasiparticles in graphene-based structures
• Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures
• Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene
• Intrinsic Limits of Subthreshold Slope in Biased Bilayer Graphene Transistor